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Publications by Rahim Ghayour
Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors
Journal of Materials
Related publications
Advanced Depleted-Substrate Transistors: Single-Gate, Double-Gate and Tri-Gate
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Electric Double Layer Gate Field-Effect Transistors Based on Si
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Modelling of Insulated-Gate Field-Effect Transistors.
Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Applied Sciences (Switzerland)
Instrumentation
Materials Science
Fluid Flow
Engineering
Computer Science Applications
Process Chemistry
Transfer Processes
Technology
Research on Microwave Junction Gate Field Effect Transistors.
