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Publications by Ryota Yoshimine
Improving Carrier Mobility of Polycrystalline Ge by Sn Doping
Scientific Reports
Multidisciplinary
High Hole Mobility (≥500 Cm2 V−1 S−1) Polycrystalline Ge Films on GeO2-coated Glass and Plastic Substrates
Applied Physics Express
Engineering
Astronomy
Physics
Related publications
Retraction: “Nucleation-Controlled Low-Temperature Solid-Phase Crystallization for Sn-Doped Polycrystalline-Ge Film on Insulator With High Carrier Mobility (∼550 Cm2/v S)” [Appl. Phys. Lett. 112, 242103 (2018)]
Applied Physics Letters
Astronomy
Physics
Effective Carrier Doping by Magnetic Field Into a Pseudogapped State in CeNiSn: A Sn NMR Study
Physical Review B
Improving the Carrier Mobility of Pentacene Thin Film Transistors by Surface Treatment of Polysilsesquioxane Gate Dielectric Layers
Zairyo/Journal of the Society of Materials Science, Japan
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
A Diarsagermylene and a Diarsastannylene Stabilised by Arene⋯Ge/Sn Interactions
Chemical Communications
Surfaces
Alloys
Materials Chemistry
Coatings
Metals
Optical
Magnetic Materials
Films
Catalysis
Chemistry
Electronic
Composites
Ceramics
Reversible Writing of High-Mobility and High-Carrier-Density Doping Patterns in Two-Dimensional Van Der Waals Heterostructures
Nature Electronics
Instrumentation
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates
Materials
Materials Science
Condensed Matter Physics
Reduction of Schottky Barrier Height for N-Type Ge Contact by Using Sn Electrode
Fabrication of Large-Grain Polycrystalline Ge Films Using Absorptive Films
Applied Physics B: Lasers and Optics
Astronomy
Physics
