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Publications by S. Balatti

A Physics-Based Model of Resistive Switching in Metal Oxides

English

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Correlation Between Filament Distribution and Resistive Switching Properties in ReRAM Consisting of Transition-Metal-Oxides

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Spin-Orbital Physics in Transition Metal Oxides

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Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

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Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories

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Resistive Switching Near Electrode Interfaces: Estimations by a Current Model

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Resistive Switching: Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019)

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Dependence of Reactive Metal Layer on Resistive Switching in a Bi-Layer Structure Ta/HfOx Filament Type Resistive Random Access Memory

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