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Publications by S. Piotrowicz

Self-Biasing Effects Induced by RF Step-Stress in Ka-Band LNAs Based on InAlN/GaN HEMT Technology

2016English

InAlN/GaN HEMT Technology for Robust HF Receivers: An Overview of the HF and LF Noise Performances

2015English

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

2010English

Related publications

A Planar Distributed Channel AlGaN/GaN HEMT Technology

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

Inductively-Tuned K/Ka Band Rf Mems Capacitive Switches

Progress In Electromagnetics Research M
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2019English

Monolithic Integration of GaN HEMT With Silicon MOS Technology

English

4-Bit Ka Band Sige Bicmos Digital Step Attenuator

Progress In Electromagnetics Research C
OpticalElectronicMagnetic Materials
2017English

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates

2019English

Rain Attenuation Technology for Ka-Band SOTM Communication

DEStech Transactions on Computer Science and Engineering
2017English

Characterisation and Analytical Modelling of GaN HEMT-based Varactor Diodes

Electronics Letters
Electronic EngineeringElectrical
2015English

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