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Publications by S.J. Pearton
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
MRS Internet Journal of Nitride Semiconductor Research
Ion Implantation and Annealing Studies in III-V Nitrides
High Temperature Stable WSi{sub X} Ohmic Contacts on GaN
RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
Implant Activation and Redistribution of Dopants in GaN
Related publications
Defect Structure in Transition Metal Oxides.
Nihon Kessho Gakkaishi
Hydrogen in Group-Iii Nitrides: An Ion Beam Analysis Study
Rare Earth Doped III-nitrides for Optoelectronics
EPJ Applied Physics
Instrumentation
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
III-V Nitrides for Electronic and Optoelectronic Applications
Proceedings of the IEEE
Electronic Engineering
Electrical
Computer Science
First-Principles Study of High-Field-Related Electronic Behavior of Group-Iii Nitrides
Physical Review B
From Quantum to Continuum Mechanics: Studying the Fracture Toughness of Transition Metal Nitrides and Oxynitrides
Materials Research Letters
Materials Science
New Catalysts for Coal Processing: Metal Carbides and Nitrides
Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
MRS Internet Journal of Nitride Semiconductor Research
