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Publications by Shinya Ootomo
Solid-Phase Diffusion of Carbon Into GaN Using SiNx/CNx/GaN Structure
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Related publications
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Reversible Changes in the Lattice Site Structure for in Implanted Into GaN
Applied Physics Letters
Astronomy
Physics
Synthesis of GaN Nanorods by a Solid-State Reaction
Journal of Nanomaterials
Materials Science
Nanotechnology
Nanoscience
Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Defect Structure of Mg-Doped GaN Nanowires
Microscopy and Microanalysis
Instrumentation
Preparation of a Smooth GaN–Gallium Solid–liquid Interface
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Growth and Properties of Intentionally Carbon-Doped GaN Layers
Crystal Research and Technology
Materials Science
Chemistry
Condensed Matter Physics