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Publications by Shu-Tong Chang
Technology Computer-Aided Design Simulation Study for a Strained InGaAs Channel N-Type Metal-Oxide-Semiconductor Field-Effect Transistor With a High-K Dielectric Oxide Layer and a Metal Gate Electrode
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
Room-Temperature Electroluminescence From Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
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Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
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Alternative Surface Passivation on Germanium for Metal-Oxide-Semiconductor Applications With High-K Gate Dielectric
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High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures
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Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
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Low Damage Patterning of In0.53Ga0.47As Film for Its Integration as N-Channel in a Fin Metal Oxide Semiconductor Field Effect Transistor Architecture
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Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature
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