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Publications by Shuichi Wakayama
Formation of Silicon Carbide in the Surface Layer of Metals by Dual High Energy Ion Implantation
Materials Transactions, JIM
Related publications
Polishing Silicon Modification Layer on Silicon Carbide Surface by Ion Beam Figuring
Chinese Optics Letters
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Suppression of Ion-Implantation Induced Porosity in Germanium by a Silicon Dioxide Capping Layer
Applied Physics Letters
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The Analysis of Friction Properties After Laser Texturizing of the Silicon Carbide Surface Layer
MATEC Web of Conferences
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Low-Energy Mass-Selected Ion Beam Deposition of Silicon Carbide With Bernas-Type Ion Source Using Methylsilane
AIP Advances
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3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching
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Formation of Silicon Carbide Layer on the Vapor-Grown Carbon Nanofiber® by Sol-Gel and Carbothermal Reduction Techniques
The Formation of Amorphous Silicon by Light Ion Damage
Materials Research Society Symposium - Proceedings
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The Influence of Ion Implantation by Phosphorous on Structural Changes in Porous Silicon
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Modification of Mechanical Properties of Silicon Nanocantilevers by Self-Ion Implantation
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