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Publications by Sichao Li
Interface Properties Study on SiC MOS With High-K Hafnium Silicate Gate Dielectric
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Related publications
Effective Improvement of High-K Hf-Silicate∕silicon Interface With Thermal Nitridation
Electronics Letters
Electronic Engineering
Electrical
Alternative Surface Passivation on Germanium for Metal-Oxide-Semiconductor Applications With High-K Gate Dielectric
Applied Physics Letters
Astronomy
Physics
Ge MOS Capacitors With Thermally Evaporated HfO[sub 2] as Gate Dielectric
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
ECS Meeting Abstracts
Pentacene Based Thin Film Transistors With High-K Dielectric Nd2O3 as a Gate Insulator
Brazilian Journal of Physics
Astronomy
Physics
Improved Properties of Ge MOS Capacitors With HfTiON or HfTiO Gate Dielectric by Using Wet-No Ge-Surface Pretreatment
Microstructure and Optical Properties of Pr3+-Doped Hafnium Silicate Films
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Theoretical Study on Leakage Current in MOS With High-K Dielectric Stack: Effects of In-Plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses
Transactions of the Materials Research Society of Japan
