Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Soon Fatt Yoon
In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors (HBTs) on 200 Mm Si Substrates: Effects of Base Thickness, Base and Sub-Collector Doping Concentrations
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
the Integration of InGaP LEDs With CMOS on 200 Mm Silicon Wafers
Related publications
Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors With Buried Tungsten Wires
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors
GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
Reduced Turn-On Voltage for NPN Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
Advances in Materials Science and Engineering
Materials Science
Engineering
4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
ECS Solid State Letters
Si/SiGe Heterojunction Collector for Low Loss Operation of Carrier Stored Trench-Gate Bipolar Transistor
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
