Discover open access scientific publications

Search, annotate, share and cite publications

Publications by St. Lenk

Effect of Helium Ion Implantation and Annealing on the Relaxation Behavior of Pseudomorphic Si1−xGex Buffer Layers on Si (100) Substrates

Journal of Applied Physics

English

Segregation of Ion Implanted Sulfur in Si(100) After Annealing and Nickel Silicidation

Journal of Applied Physics

English

Related publications

Deep Photoluminescence in Si/Si1−xGex/Si Quantum Wells Created by Ion Implantation and Annealing

Applied Physics Letters

English

Improved Hole Mobilities and Thermal Stability in a Strained‐Si∕strained‐Si1−yGey∕strained‐Si Heterostructure Grown on a Relaxed Si1−xGex Buffer

Applied Physics Letters

English

HRTEM and EELS Analysis of Interfacial Reactions in Ti/Si1-xGex/Si(100)

Microscopy and Microanalysis

Instrumentation

English

Observation of a (2×8) Surface Reconstruction on Si1−xGex Alloys Grown on (100) Si by Molecular-Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

Acta Physica Polonica A

English

Composition and Strain Contrast of Si1−xGex (X=0.20) and Si1−yCy (Y≤0.015) Epitaxial Strained Films on (100) Si in Annular Dark Field Images

Journal of Applied Physics

English

Change of Electrophysical Properties of the Si(111) and Si(100) Surface in the Process of Ion Implantation and Next Annealing

Eurasian Journal of Physics and Functional Materials

English

CoSi2heteroepitaxy on Patterned Si(100) Substrates

Journal of Applied Physics

English

Growth Rate Effect on 3c-SiC Film Residual Stress on (100) Si Substrates

Materials Science Forum

English