Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Suguru Funasaki
Electric Properties of Carbon-Doped N-Type Β-FeSi2/P-Type Si Heterojunction Diodes
Related publications
Comment on ‘‘Effect of Sub‐band‐gap Illumination on Β‐FeSi2/N‐type Si Diodes Under Reverse Bias’’
Applied Physics Letters
Astronomy
Physics
Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of N-Type Β-FeSi2 Thin Films and P-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering
Advances in Materials Science and Engineering
Materials Science
Engineering
Electrical Transport Properties of Isolated Carbon Nanotube/Si Heterojunction Schottky Diodes
Applied Physics Letters
Astronomy
Physics
Enhancement of Photoluminescence From Cu-Doped Β-FeSi2/Si Heterostructures
Growth of P-Type Β-FeSi2 Polycrystalline Films by RF Magnetron Sputtering
Spin Drift in Highly Doped N-Type Si
Applied Physics Letters
Astronomy
Physics
Electrical Characterization of Transparent P–i–n Heterojunction Diodes
Journal of Applied Physics
Astronomy
Physics
Trap-Mediated Electronic Transport Properties of Gate-Tunable Pentacene/MoS2 P-N Heterojunction Diodes
Scientific Reports
Multidisciplinary
Fabrication and Characteristics of Nitrogen-Doped Nanocrystalline Diamond/P-Type Silicon Heterojunction
Nano-Micro Letters
Surfaces
Electronic Engineering
Nanoscience
Optical
Electrical
Magnetic Materials
Films
Nanotechnology
Electronic
Coatings
