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Publications by T. González

Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors

Acta Physica Polonica A

English

Monte Carlo Study of Kink Effect in Short-Channel InAlAs/InGaAs High Electron Mobility Transistors

Journal of Applied Physics

English

Related publications

InAs High-Electron Mobility Transistors on the Path to THz Operation

English

InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Impact of the Gate Dielectric on Contact Resistance in High-Mobility Organic Transistors

Advanced Electronic Materials

Magnetic Materials

English

Electron Mobility in Double Gate Silicon on Insulator Transistors: Symmetric-Gate Versus Asymmetric-Gate Configuration

Journal of Applied Physics

English

Ballistic Electron Emission Microscopy Spectroscopy Study of AlSb and InAs/AlSb Superlattice Barriers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Applied Physics Express

English

Fabrication of 30nm T-Gate High Electron Mobility Transistors Using a Bi-Layer of PMMA and UVIII

English

Monte Carlo Simulation of Double Gate Silicon on Insulator Devices Operated as Velocity Modulation Transistors

Applied Physics Letters

English