(PDF) InAs Thin-Channel High-Electron-Mobility Transistors

InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Applied Physics Express - Japan

doi 10.7567/apex.6.034001

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Date

March 1, 2013

Authors

Edward-Yi Chang

Che-Yang Chiang

Yasuyuki Miyamoto

Publisher

Japan Society of Applied Physics

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