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Publications by T. Hopf

Dirac Point and Transconductance of Top-Gated Graphene Field-Effect Transistors Operating at Elevated Temperature

Journal of Applied Physics

English

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Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC

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Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

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Influence of Metal Work Function on the Position of the Dirac Point of Graphene Field-Effect Transistors

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Hysteresis Modeling in Graphene Field Effect Transistors

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