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Publications by T. Spila

Phosphorus Incorporation During Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology

Journal of Applied Physics

English

Related publications

Gallium Desorption Kinetics on (0001) GaN Surface During the Growth of GaN by Molecular-Beam Epitaxy

Applied Physics Letters

English

InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Air Stabilized (001)p‐type GaAs Fabricated by Molecular Beam Epitaxy With Reduced Surface State Density

Applied Physics Letters

English

Surface Roughening of Ge(001) During 200 eV Xe Ion Bombardment and Ge Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Evolution of Surface Morphology During Fe/Si(111) and Fe/Si(001) Heteroepitaxy

Physical Review B

English

Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy

Applied Physics Letters

English

Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.

English

Cover Picture: Growth of SrTiO3on Si(001) by Hybrid Molecular Beam Epitaxy (Phys. Status Solidi RRL 11/2014)

Physica Status Solidi - Rapid Research Letters

Materials Science

Condensed Matter Physics

English