Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Takashi FUYUKI
Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.
SHINKU
Related publications
Evaluation of Few-Layer Graphene Grown by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol
e-Journal of Surface Science and Nanotechnology
Surfaces
Mechanics of Materials
Condensed Matter Physics
Interfaces
Nanoscience
Bioengineering
Films
Biotechnology
Coatings
Nanotechnology
High Quality Epitaxial Growth of PbTiO3 by Molecular Beam Epitaxy Using H2O2 as the Oxygen Source
Applied Physics Letters
Astronomy
Physics
Phosphorus Incorporation During Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology
Journal of Applied Physics
Astronomy
Physics
Structure of SiC Films Grown on Si(111) and (110) Substrates by Solid-Source Molecular Beam Epitaxy
Acta Crystallographica Section A Foundations of Crystallography
Thickness Control of Molecular Beam Epitaxy Grown Layers at the 0.01–0.1 Monolayer Level
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Photoluminescence of InGaAs/GaAsBi/InGaAs Type-Ii Quantum Wells Grown by Gas Source Molecular Beam Epitaxy
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Study on Property of Atomic Layer Epitaxy Growth of InN by Using Indium Chloride
Journal of Advanced Science
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
Scientific Reports
Multidisciplinary
The Adsorption-Controlled Growth of LuFe2O4 by Molecular-Beam Epitaxy
Applied Physics Letters
Astronomy
Physics