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Publications by Takekazu Masui
Depletion-Mode Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on Β-Ga2O3 (010) Substrates and Temperature Dependence of Their Device Characteristics
Applied Physics Letters
Astronomy
Physics
Related publications
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Incident Wavelength and Polarization Dependence of Spectral Shifts in Β-Ga2O3 UV Photoluminescence
Scientific Reports
Multidisciplinary
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
The Temperature Dependence of the Electron Mobility Degradation Mechanisms in N-Channel Metal-Oxide-Semiconductor Field Effect Transistors With ZrO2 and Sm2O3 Gate Dielectrics
Applied Physics Letters
Astronomy
Physics
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Comparison of Optoelectrical Characteristics Between Schottky and Ohmic Contacts to Β-Ga2O3 Thin Film
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic
Tunneling Spectroscopy of Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperature
Applied Physics Letters
Astronomy
Physics
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
