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Publications by Takeshi Kitajima
Growth Modes of InN (000-1) on GaN Buffer Layers on Sapphire
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Related publications
Investigation of AlGaN Buffer Layers on Sapphire Grown by MOVPE
Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic
Effects of Growth Temperature on GaN Nucleation Layers
Applied Physics Letters
Astronomy
Physics
Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Effects of Growth Temperature on InN∕GaN Nanodots Grown by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics
Astronomy
Physics
Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates
MRS Internet Journal of Nitride Semiconductor Research
Molten Salt-Based Growth of Bulk GaN and InN for Substrates
Influence of Buffer Layers on Ni Thin Film Structure and Graphene Growth by CVD
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic