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Publications by Tamotsu Hashizume

Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by Inductively Coupled Plasma Etching of AlGaN Surfaces

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Fabrication and Characterization of a GaAs-based Three-Terminal Nanowire Junction Device Controlled by Double Schottky Wrap Gates

Applied Physics Letters

English

Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures

Applied Physics Express

English

Effect of Carbon Incorporation on Electrical Properties of N-Type GaN Surfaces

Journal of Applied Physics

English

Improvements of Electronic and Optical Characteristics of N-GaN-Based Structures by Photoelectrochemical Oxidation in Glycol Solution

Journal of Applied Physics

English

Formation of Thin Native Oxide Layer on N-GaN by Electrochemical Process in Mixed Solution With Glycol and Water

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Solid-Phase Diffusion of Carbon Into GaN Using SiNx/CNx/GaN Structure

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Large Reduction of Leakage Currents in AlGaN Schottky Diodes by a Surface Control Process and Its Mechanism

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English