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Publications by Thomas Kups
On the Site Occupancy of Dopants in 4h-SiC
Microscopy and Microanalysis
Instrumentation
Related publications
Suppression of Rotational Twins in Epitaxial B12P2 on 4h-SiC
Channel Width Effect on the Operation of 4h-SiC Vertical JFETs
Physica Status Solidi (A) Applications and Materials Science
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Condensed Matter Physics
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Charge State Switching of the Divacancy Defect in 4H -SiC
Physical Review B
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Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Total Dose Effects on 4h-SiC Bipolar Junction Transistors
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Neutron Radiation Effect on 4h-SiC MESFETs and SBDs
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Graphene Epitaxially Grown on Vicinal 4h-SiC(0001) Substrates
e-Journal of Surface Science and Nanotechnology
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Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation
Journal of the Mechanical Behavior of Biomedical Materials
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Effect of High-Energy Protons on 4h-SiC Radiation Detectors
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