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Publications by Trevor E. Buehl
Erratum To: Controlling N-Type Carrier Density From Er Doping of InGaAs With MBE Growth Temperature
Journal of Electronic Materials
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Growth and Characterization of TbAs:GaAs Nanocomposites
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
Related publications
P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
MRS Internet Journal of Nitride Semiconductor Research
Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-Type MOSFET
Doping and MBE Growth of ZnSe for Blue LEDs and LDs
N+ InGaAs/nGaAs Heterojunction Schottky Diodes With Low Barriers Controlled by Band Offset and Doping Level
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Segregation in InGaAs/GaAs Quantum Wells: MOCVD Versus MBE
Microscopy and Microanalysis
Instrumentation
Highp-Type Doping of ZnBeSe Using a Modified Delta-Doping Technique With N and Te
Journal of Applied Physics
Astronomy
Physics
N-Type Doping of Poly(p-Phenylene Vinylene) With Air-Stable Dopants
Applied Physics Letters
Astronomy
Physics
Erratum To: A Novel Esterase Sso2518 From Sulfolobus Solfataricus With a Much Lower Temperature Optimum Than the Growth Temperature
Biotechnology Letters
Applied Microbiology
Biotechnology
Medicine
Bioengineering
Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
