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Publications by V. X. Ho
Photoluminescence Quantum Efficiency of Er Optical Centers in GaN Epilayers
Scientific Reports
Multidisciplinary
Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD
MRS Advances
Related publications
Optical Excitation and External Photoluminescence Quantum Efficiency of Eu3+ in GaN
Scientific Reports
Multidisciplinary
Photoluminescence Properties of a Single GaN Nanorod With GaN∕AlGaN Multilayer Quantum Disks
Applied Physics Letters
Astronomy
Physics
Photoluminescence Properties of Erbium Doped InGaN Epilayers
Applied Physics Letters
Astronomy
Physics
Polarized Photoluminescence From Single GaN Nanorods: Effects of Optical Confinement
Optics Express
Optics
Atomic
Molecular Physics,
Nanostructuring Induced Enhancement of Radiation Hardness in GaN Epilayers
Applied Physics Letters
Astronomy
Physics
Photoluminescence Quantum Efficiency of Dense Silicon Nanocrystal Ensembles inSiO2
Physical Review B
Optically Active Centers in Eu Implanted, Eu in Situ Doped GaN, and Eu Doped GaN Quantum Dots
Journal of Applied Physics
Astronomy
Physics
Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates
MRS Internet Journal of Nitride Semiconductor Research
