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Publications by W. Dobbelaere

Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy

Journal of Applied Physics

English

Related publications

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

English

InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

English

Photodegradation of Si-Doped GaAs Nanowire

Chemical Engineering

English

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

English

Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy

Applied Physics Letters

English

Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics

English

Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Characterization of Si/Si1−yCy Superlattices Grown by Surfactant Assisted Molecular Beam Epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English