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Publications by William G. Vandenberghe

Imperfect Two-Dimensional Topological Insulator Field-Effect Transistors

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2017English

Dielectric Properties of Hexagonal Boron Nitride and Transition Metal Dichalcogenides: From Monolayer to Bulk

npj 2D Materials and Applications
Mechanics of MaterialsMaterials ScienceChemistryCondensed Matter PhysicsMechanical Engineering
2018English

Related publications

Thin Film Three-Dimensional Topological Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors: A Candidate for Sub-10 Nm Devices

Journal of Applied Physics
AstronomyPhysics
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Two-Dimensional Quadrupole Topological Insulator in Graphyne

English

Investigations on Field-Effect Transistors Based on Two-Dimensional Materials

Annalen der Physik
AstronomyPhysics
2017English

Characterization of Two-Dimensional Left-Handed Traveling-Wave Field-Effect Transistors

Progress In Electromagnetics Research Letters
OpticalElectronicMagnetic Materials
2012English

Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors

Applied Physics Letters
AstronomyPhysics
2001English

Three-Dimensional Topological Insulator Based Nanospaser

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Lattice Formulation of Two Dimensional Topological Field Theory

2008English

Two-Component Anomalous Hall Effect in a Magnetically Doped Topological Insulator

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2018English

Field Effect Transistors

2013English

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