Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Woong-Chul Shin
Investigations on the Bias Temperature Stabilities of Oxide Thin Film Transistors Using In–Ga–Zn–O Channels Prepared by Atomic Layer Deposition
RSC Advances
Chemistry
Chemical Engineering
Related publications
Review Article: Atomic Layer Deposition for Oxide Semiconductor Thin Film Transistors: Advances in Research and Development
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Growth Process Optimization of ZnO Thin Film Using Atomic Layer Deposition
Materials Research Express
Surfaces
Alloys
Plastics
Polymers
Metals
Optical
Biomaterials
Magnetic Materials
Films
Coatings
Electronic
Physical Characterization of Amorphous In-Ga-Zn-O Thin-Film Transistors With Direct-Contact Asymmetric Graphene Electrode
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Preparation of Graphene Oxide/Semiconductor Oxide Composites by Using Atomic Layer Deposition
Applied Surface Science
Surfaces
Astronomy
Condensed Matter Physics
Interfaces
Films
Coatings
Chemistry
Physics
2D MoSe2 Structures Prepared by Atomic Layer Deposition
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Substrate-Biasing During Plasma-Assisted Atomic Layer Deposition to Tailor Metal-Oxide Thin Film Growth
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Frontispiece: Synthesis of Thin‐Film Metal Pyrites by an Atomic Layer Deposition Approach
Chemistry - A European Journal
Organic Chemistry
Catalysis
Chemistry
Investigations Into the Impact of Various Substrates and ZnO Ultra Thin Seed Layers Prepared by Atomic Layer Deposition on Growth of ZnO Nanowire Array
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 With Ozone