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Publications by X. M. Xie
InGaP/InGaAsN/GaAs NpN Double-Heterojunction Bipolar Transistor
Applied Physics Letters
Astronomy
Physics
Related publications
RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
InGaP/GaAs/InGaP Double-Heterojunction Bipolar Transistors Grown by Solid-Source Molecular-Beam Epitaxy With a Valved Phosphorus Cracker
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Extrinsic Base Regrowth of P-InGaN for NPN-Type GaN/InGaN Heterojunction Bipolar Transistor
GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
Thermally Stable Structure of InGaP/GaAs Hetero-Junction Bipolar Transistor: Dual-Emitter Structure
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
An AlGaAs Double‐heterojunction Bipolar Transistor Grown by Molecular‐beam Epitaxy
Applied Physics Letters
Astronomy
Physics
Empirical Modeling of a GaAs/A1GaAs Heterojunction Bipolar Transistor for Microwave Circuit Applications.
Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors With High Current Amplification (Adv. Electron. Mater. 3/2019)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Ultra High Speed Heterojunction Bipolar Transistor Technology
