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Publications by Xinzhi Sheng
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well With Different Thickness
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Related publications
Admittance Spectroscopy of InAlAs/InGaAs Single‐quantum‐well Structure With High Concentration of Electron Traps in InAlAs Layers
Journal of Applied Physics
Astronomy
Physics
Magnetooptical Study of Zeeman Effect in Mn Modulation-Doped InAs/InGaAs/InAlAs Quantum Well Structures
Journal of Applied Physics
Astronomy
Physics
Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor
Journal of Applied Physics
Astronomy
Physics
Photoluminescence From a Single InGaAs Epitaxial Quantum Rod
Applied Physics Letters
Astronomy
Physics
InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Field Distribution in Waveguide of Mid-Infrared Strain-Compensated InAlAs/InGaAs/InP Quantum Cascade Laser
Optical and Quantum Electronics
Electronic Engineering
Electronic
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Optics
Advances in InGaAs/InP Single-Photon Detector Systems for Quantum Communication
Light: Science and Applications
Optics
Molecular Physics,
Optical
Atomic
Magnetic Materials
Electronic
InP-based Lattice-Matched InGaAsP and Strain-Compensated InGaAs∕InGaAs Quantum Well Cells for Thermophotovoltaic Applications
Journal of Applied Physics
Astronomy
Physics
Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
Scientific Reports
Multidisciplinary
