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Publications by Y. L. Foo
Phosphorus Incorporation During Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology
Journal of Applied Physics
Astronomy
Physics
Related publications
Gallium Desorption Kinetics on (0001) GaN Surface During the Growth of GaN by Molecular-Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Air Stabilized (001)p‐type GaAs Fabricated by Molecular Beam Epitaxy With Reduced Surface State Density
Applied Physics Letters
Astronomy
Physics
Surface Roughening of Ge(001) During 200 eV Xe Ion Bombardment and Ge Molecular Beam Epitaxy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Evolution of Surface Morphology During Fe/Si(111) and Fe/Si(001) Heteroepitaxy
Physical Review B
Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.
SHINKU
Cover Picture: Growth of SrTiO3on Si(001) by Hybrid Molecular Beam Epitaxy (Phys. Status Solidi RRL 11/2014)
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics