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Publications by Yasaman Najmabadi
Design and Simulation of Low Noise Amplifier at 10 GHz by GaN High Electron Mobility Transistor
IOSR Journal of Electrical and Electronics Engineering
Related publications
Electrostatic Discharge Protection for a 10 GHz Low Noise Amplifier
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Temperature Dependent Effective Mass in AlGaN/GaN High Electron Mobility Transistor Structures
Applied Physics Letters
Astronomy
Physics
AlGaN/GaN High-Electron-Mobility Transistor pH Sensor With Extended Gate Platform
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Low-Noise Amplifier Design
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Design and Performance Analysis of 1.8 GHz Low Noise Amplifier for Wireless Receiver Application
Indonesian Journal of Electrical Engineering and Computer Science
Control
Electronic Engineering
Information Systems
Signal Processing
Computer Networks
Hardware
Communications
Optimization
Electrical
Architecture
A Scalable High Frequency Noise Model for Bipolar Transistors With Application to Optimal Transistor Sizing for Low-Noise Amplifier Design
