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Publications by Yuefei Cai
Monolithic Integration of III-nitride Voltage-Controlled Light Emitters With Dual-Wavelength Photodiodes by Selective-Area Epitaxy
Optics Letters
Optics
Atomic
Molecular Physics,
Related publications
Indium Nitride Nanowires for Efficient Light Emitters
SPIE Newsroom
Submicron Active-Passive Integration With Position and Number Controlled InAs∕InP (100) Quantum Dots (1.55μm Wavelength Region) by Selective-Area Growth
Applied Physics Letters
Astronomy
Physics
III-Nitride Visible- And Solar-Blind Avalanche Photodiodes
Monolithic III-V/Si Integration
High-Efficiency P-I-N Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Magnetic Domain Characterizations of Anisotropic-Shaped MnAs Nanoclusters Position-Controlled by Selective-Area Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
Scientific Reports
Multidisciplinary
Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates
International Journal of High Speed Electronics and Systems
Electronic Engineering
Hardware
Optical
Electrical
Architecture
Magnetic Materials
Electronic
Origin of Broad Luminescence From Site-Controlled InGaN Nanodots Fabricated by Selective-Area Epitaxy (Phys. Status Solidi a 3∕2014)
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
