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Publications by Yuuki Ohno
Filament Formation and Erasure in Molybdenum Oxide During Resistive Switching Cycles
Applied Physics Letters
Astronomy
Physics
Related publications
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Resistance Switching Properties of Molybdenum Oxide Films
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories
IFIP Advances in Information and Communication Technology
Computer Networks
Information Systems
Management
Communications
Approaches for Improving the Performance of Filament-Type Resistive Switching Memory
Chinese Science Bulletin
Conducting Filament Engineering by Triple-Layer RRAM for Uniform Resistive Switching
Giant Nonvolatile Resistive Switching in a Mott Oxide and Ferroelectric Hybrid
Proceedings of the National Academy of Sciences of the United States of America
Multidisciplinary
Correlation Between Filament Distribution and Resistive Switching Properties in ReRAM Consisting of Transition-Metal-Oxides
Journal of the Vacuum Society of Japan
Surfaces
Instrumentation
Interfaces
Spectroscopy
Materials Science
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Dependence of Reactive Metal Layer on Resistive Switching in a Bi-Layer Structure Ta/HfOx Filament Type Resistive Random Access Memory
Applied Physics Letters
Astronomy
Physics
