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Publications by Zer-Ming Lin
Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
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Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/N-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
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Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors
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Inhomogeneous Barrier Height Effect on the Current–voltage Characteristics of an Au/N-InP Schottky Diode
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Experimental and Simulation Study of the Schottky Barrier Lowering by Substrate Doping Variation for PtSi Source/Drain SBFETs
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Risk
Reliability
Electrical
Safety
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