Dependence of Spontaneous Polarization on Stacking Sequence in SiC Revealed by Local Schottky Barrier Height Variations Over a Partially Formed 8h-SiC Layer on a 4h-SiC Substrate
Applied Physics Letters - United States
doi 10.1063/1.3670329
Full Text
Open PDFAbstract
Available in full text
Date
December 19, 2011
Authors
Publisher
AIP Publishing