Amanote Research
Register
Sign In
A New Regenerative Divider by Four Up to 160 GHz in SiGe Bipolar Technology
doi 10.1109/mwsym.2006.249708
Full Text
Open PDF
Abstract
Available in
full text
Date
June 1, 2006
Authors
Saverio Trotta
Herbert Knapp
Thomas F. Meister
Klaus Aufinger
Josef Bock
Bernhard Dehlink
Werner Simburger
Arpad L. Scholtz
Publisher
IEEE
Related search
170-GHz Transceiver With On-Chip Antennas in SiGe Technology
Components for Receiver Front-Ends in SiGe Bipolar Technology
A 23 GHz Active Mixer With Integrated Diode Linearizer in SiGe BiCMOS Technology
A Regenerative Frequency Divider of Improved Stability
A 219–266 GHz LO-tunable Direct-Conversion IQ Receiver Module in a SiGe HBT Technology
International Journal of Microwave and Wireless Technologies
Electronic Engineering
Electrical
Determination of Bandgap Narrowing and Parasitic Energy Barriers in SiGe HBT's Integrated in a Bipolar Technology
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Ultrahigh-Performance 8-GHz SiGe Power HBT
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A Power-Efficient 5.6-GHz Process-Compensated CMOS Frequency Divider
IEEE Transactions on Circuits and Systems II: Express Briefs
A D-Band Divide-By-6 Injection-Locked Frequency Divider With Lange-Coupler Feedback Architecture in 0.13µm SiGe HBT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic