InAsSb‐based Mid‐infrared Lasers (3.8–3.9 Μm) and Light‐emitting Diodes With AlAsSb Claddings and Semimetal Electron Injection, Grown by Metalorganic Chemical Vapor Deposition

Applied Physics Letters - United States
doi 10.1063/1.118141
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

1.24 Μm InGaAs/GaAs Quantum Dot Laser Grown by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Applied Physics Letters
AstronomyPhysics
2004English

Electron and Hole Traps in N-Doped ZnO Grown on P-Type Si by Metalorganic Chemical Vapor Deposition

Journal of Applied Physics
AstronomyPhysics
2007English

Measurement of Mid-Infrared AlInSb Light-Emitting Diodes With Surface Patterning

2008English

Characterization of Heavily Carbon‐doped GaAs Grown by Metalorganic Chemical Vapor Deposition and Metalorganic Molecular Beam Epitaxy

Journal of Applied Physics
AstronomyPhysics
1992English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Performance Limits of the Mid-Wave InAsSb/AlAsSb nBn HOT Infrared Detector

Optical and Quantum Electronics
Electronic EngineeringElectronicMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsOptics
2013English

High-Performance WS2 Monolayer Light-Emitting Tunneling Devices Using 2D Materials Grown by Chemical Vapor Deposition

English

1.16 Μm InAs/GaAs Quantum Dot Laser Grown by Metal Organic Chemical Vapor Deposition

Acta Physica Polonica A
AstronomyPhysics
2018English

Plasma-Etching-Enhanced Deep Centers in N-GaN Grown by Metalorganic Chemical-Vapor Deposition

Applied Physics Letters
AstronomyPhysics
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy