Charge Transport Gap in Graphene Antidot Lattices

Physical Review B
doi 10.1103/physrevb.86.045445
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Graphene on Graphene Antidot Lattices: Electronic and Transport Properties

Physical Review B
2015English

Boron and Nitrogen Doping in Graphene Antidot Lattices

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Thermodynamic Picture of Ultrafast Charge Transport in Graphene

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2015English

Charge Carrier Transport Across Grain Boundaries in Graphene

Acta Materialia
AlloysPlasticsPolymersMetalsOpticalMagnetic MaterialsCompositesElectronicCeramics
2018English

Charge-Carrier Transport in Large-Area Epitaxial Graphene

Annalen der Physik
AstronomyPhysics
2017English

Electron Transport Through Antidot Superlattices in Si/SiGe Heterostructures: New Magnetoresistance Resonances in Lattices With a Large Aspect Ratio of Antidot Diameter to Lattice Period

Europhysics Letters
AstronomyPhysics
2006English

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

Physical Review B
2012English

Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2011English

Composite Super-Moiré Lattices in Double-Aligned Graphene Heterostructures

Science advances
Multidisciplinary
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy