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InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V
doi 10.1109/vlsit.2016.7573418
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Date
June 1, 2016
Authors
Cezar B. Zota
Fredrik Lindelow
Lars-Erik Wernersson
Erik Lind
Publisher
IEEE
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