Si-Induced Enhancement of Ohmic Performance of Ti∕Al∕Mo∕Au Metallisation for AlGaN∕GaN HEMTs

Electronics Letters- United Kingdom

doi 10.1049/el:20051849

Full Text

Abstract

Available in

Date

Authors

Publisher

Institution of Engineering and Technology (IET)

Related search

Electrical Characterization and Nanoscale Surface Morphology of Optimized Ti/Al/Ta/Au Ohmic Contacts for AlGaN/GaN HEMT

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation

2011English

Enhancement Mode Power Switching AlGaN HEMTs

2013English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007Danish

Enhancement-Mode AlGaN/GaN HEMTs With High Linearity Fabricated by Hydrogen Plasma Treatment

2009English

Temperature Dependence of Contact Resistance of Au−Ti−Pd2Si−n+-Si Ohmic Contacts

Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic EngineeringOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy