Amanote Research

Amanote Research

  • Register
  • Sign In

Enhancement Mode Power Switching AlGaN HEMTs

doi 10.21236/ada584741

Full Text

Abstract

Available in

Date

May 14, 2013

Authors

James R. Shealy

Publisher

Defense Technical Information Center


Related search

Enhancement-Mode AlGaN/GaN HEMTs With High Linearity Fabricated by Hydrogen Plasma Treatment

2009English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007Danish

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society
AstronomyPhysics
2011English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

Materials
Materials ScienceCondensed Matter Physics
2019English

Si-Induced Enhancement of Ohmic Performance of Ti∕Al∕Mo∕Au Metallisation for AlGaN∕GaN HEMTs

Electronics Letters
Electronic EngineeringElectrical
2005English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

2010English

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

2010English

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2007English

Amanote Research

Note-taking for researchers

Follow Amanote


© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy