Metal Catalyzed Porous N-Type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation

ECS Transactions - United States
doi 10.1149/05302.0017ecst
Full Text
Abstract

Available in full text

Categories
Engineering
Date
Authors
Publisher

The Electrochemical Society

Related search

W and WSix Ohmic Contacts on P- And N-Type GaN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
1999English

High Resistivity GaN Single Crystalline Substrates

Acta Physica Polonica A
AstronomyPhysics
1997English

Formation of High-Quality Ag-Based Ohmic Contacts to P-Type GaN

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2008English

GaN-Based Schottky Diode

2018English

Electroluminescence Emission From Light-Emitting Diode of P-ZnO/(InGaN/GaN) Multiquantum Well/N-GaN

Applied Physics Letters
AstronomyPhysics
2011English

Electrical Properties of Metal Contacts on Laser-Irradiated N-Type GaN

Applied Physics Letters
AstronomyPhysics
2003English

Two-Step Deposition of Al-Doped ZnO on P-GaN to Form Ohmic Contacts

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2017English

Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Microstructural Investigation of Oxidized Ni/Au Ohmic Contact to P-Type GaN

Journal of Applied Physics
AstronomyPhysics
1999English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy