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Determination of Ga Auto-Incorporation in Nominal InAlN Epilayers Grown by MOCVD

Journal of Materials Chemistry C - United Kingdom
doi 10.1039/c4tc00480a
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Abstract

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Categories
Materials ChemistryChemistry
Date

January 1, 2014

Authors
M. D. SmithE. TaylorT. C. SadlerV. Z. ZubialevichK. LorenzH. N. LiJ. O'ConnellE. AlvesJ. D. HolmesR. W. MartinP. J. Parbrook
Publisher

Royal Society of Chemistry (RSC)


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