Amanote Research
Register
Sign In
Simulation of Interface States Effect on the Scanning Capacitance Microscopy Measurement of P–n Junctions
Applied Physics Letters
- United States
doi 10.1063/1.1532547
Full Text
Open PDF
Abstract
Available in
full text
Categories
Astronomy
Physics
Date
December 23, 2002
Authors
J. Yang
F. C. J. Kong
Publisher
AIP Publishing
Related search
Scanning Capacitance Microscopy Characterization of AIIIBV Epitaxial Layers
Materials Science-Poland
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Characterization of GaAs-based N-N and P-N Interface Junctions Prepared by Direct Wafer Bonding
Journal of Applied Physics
Astronomy
Physics
Effect of High Current Density on the Admittance Response of Interface States in Ultrathin MIS Tunnel Junctions
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Visualization of MeV Ion Impacts in Si Using Scanning Capacitance Microscopy
Physical Review B
Electrical and Structural Characterization of GaN P-N Heterostuctures by Scanning Probe Microscopy
Microscopy and Microanalysis
Instrumentation
Direct Assessment of P–n Junctions in Single GaN Nanowires by Kelvin Probe Force Microscopy
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Scanning Tunneling Microscopy of InAs/GaSb Superlattices: Subbands, Interface Roughness, and Interface Asymmetry
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
The Effect of Trapping States on Tunneling in Metal‐semiconductor Junctions
Applied Physics Letters
Astronomy
Physics
Two-Dimensional Profiling of Carriers in a Buried Heterostructure Multi-Quantum-Well Laser: Calibrated Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
