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Direct Measurement of Back-Tunneling Current During Program/Erase Operation of MONOS Memories and Its Dependence on Gate Work Function
doi 10.7567/ssdm.2009.g-3-1
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Date
October 8, 2009
Authors
J. Fujiki
S. Fujii
N. Yasuda
K. Muraoka
Publisher
The Japan Society of Applied Physics
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