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Evidence of Hole Direct Tunneling Through Ultrathin Gate Oxide Using P/Sup +/ Poly-SiGe Gate
IEEE Electron Device Letters
- United States
doi 10.1109/55.767094
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Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
June 1, 1999
Authors
Unknown
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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