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Improved Properties of Ge MOS Capacitors With HfTiON or HfTiO Gate Dielectric by Using Wet-No Ge-Surface Pretreatment
doi 10.1109/edssc.2008.4760737
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Date
December 1, 2008
Authors
C.X. Li
X. Zou
J.P. Xu
P.T. Lai
Publisher
IEEE
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