Analysis of the Efficient High-Temperature in Situ Photoluminescence From GaN Layers During Epitaxial Growth

Condensed Matter
doi 10.3390/condmat2020019
Full Text
Abstract

Available in full text

Date
Authors
Publisher

MDPI AG

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy