Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range

Materials Science Forum
doi 10.4028/www.scientific.net/msf.858.741
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Trans Tech Publications, Ltd.

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy