Amanote Research
Register
Sign In
Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM
IEEE Electron Device Letters
- United States
doi 10.1109/led.2006.880651
Full Text
Open PDF
Abstract
Available in
full text
Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
September 1, 2006
Authors
Y.-H. Wu
I. Chang
C.-Y. Wang
T. Kao
C.-M. Kuo
A. Ku
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Related search
A Single Beam Data Writing Process for Holographic Data Storage.
Boron Nitride for Hydrogen Storage
ChemPlusChem
Chemistry
Implementation of Electrochemical Methods for Metrology and Analysis of Nano Electronic Structures of Deep Trench DRAM
Journal of Semiconductor Technology and Science
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Formation of Silicon Germanium Nitride Layer With Distributed Charge Storage Elements
Applied Physics Letters
Astronomy
Physics
A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-Nm Saddle-Fin Transistor DRAM Technology
Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Dual-Operating-Voltage Scheme for a Single 5-V 16-Mbit DRAM
IEEE Journal of Solid-State Circuits
Electronic Engineering
Electrical
Investigation of Interlayer Dielectric Material Influence on DRAM Retention Time
Phonon-Coupled Trap-Assisted Charge Injection in Metal-Nitride-Oxide-Silicon/Silicon-Oxide-Nitride-Oxide-Silicon Structures
Journal of Applied Physics
Astronomy
Physics
