Off-State Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-Gate Annealing
Semiconductor Science and Technology - United Kingdom
doi 10.1088/0268-1242/31/5/055019
Full Text
Open PDFAbstract
Available in full text
Categories
Date
April 5, 2016
Authors
Publisher
IOP Publishing